shengyuic
shengyuic
sale@shengyuic.com
71V416L10YG8
the part number is 71V416L10YG8
Part
71V416L10YG8
Description
IC SRAM 4M PARALLEL 44SOJ
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Access Time: 10ns
Packaging: Tape & Reel (TR)
Supplier Device Package: 44-SOJ
Memory Type: Volatile
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-SOJ
Voltage - Supply: 3 V ~ 3.6 V
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Manufacturer Standard Lead Time: 10 Weeks
Email: sale@shengyuic.com
Series: -
Base Part Number: IDT71V416
Other Names: IDT71V416L10YG8 IDT71V416L10YG8-ND
Memory Format: SRAM
Technology: SRAM - Asynchronous
Operating Temperature: 0°C ~ 70°C (TA)
Related Parts For 71V416L10YG8
71V416L10BE

Integrated Device Technology

IC SRAM 4M PARALLEL 48CABGA

71V416L10BE

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT PARALLEL 48CABGA

71V416L10BE

Renesas

3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout

71V416L10BE

Integrated Device Technology (IDT)

SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 10ns 48-Pin CABGA Tube/Tray

71V416L10BE

Renesas Electronics America

IC SRAM 4M PARALLEL 48CABGA

71V416L10BE

Renesas Electronics Corporation

IC SRAM 4MBIT PARALLEL 48CABGA

71V416L10BE8

Integrated Device Technology

IC SRAM 4M PARALLEL 48CABGA

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!