shengyuic
shengyuic
sale@shengyuic.com
71V632S5PFGI8
the part number is 71V632S5PFGI8
Part
71V632S5PFGI8
Description
IC SRAM 2M PARALLEL 100TQFP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Access Time: 5ns
Packaging: Tape & Reel (TR)
Supplier Device Package: 100-TQFP (14x14)
Memory Type: Volatile
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: SRAM - Synchronous Memory IC 2Mb (64K x 32) Parallel 100MHz 5ns 100-TQFP (14x14)
Voltage - Supply: 3.135 V ~ 3.63 V
Clock Frequency: 100MHz
Memory Size: 2Mb (64K x 32)
Memory Interface: Parallel
Write Cycle Time - Word, Page: -
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Manufacturer Standard Lead Time: 10 Weeks
Email: sale@shengyuic.com
Series: -
Base Part Number: IDT71V632
Other Names: IDT71V632S5PFGI8 IDT71V632S5PFGI8-ND
Memory Format: SRAM
Technology: SRAM - Synchronous
Operating Temperature: -40°C ~ 85°C (TA)
Related Parts For 71V632S5PFGI8
71V632S5PFG

Integrated Device Technology

IC SRAM 2M PARALLEL 100TQFP

71V632S5PFG

Renesas

3.3V 64K x 32 Synchronous PipeLined Burst SRAM

71V632S5PFG

Renesas Electronics Corporation

IC SRAM 2MBIT PARALLEL 100TQFP

71V632S5PFG8

Integrated Device Technology

IC SRAM 2M PARALLEL 100TQFP

71V632S5PFG8

Renesas

3.3V 64K x 32 Synchronous PipeLined Burst SRAM

71V632S5PFG8

Renesas Electronics Corporation

IC SRAM 2MBIT PARALLEL 100TQFP

71V632S5PFGI

Integrated Device Technology

IC SRAM 2M PARALLEL 100TQFP

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!