shengyuic
shengyuic
sale@shengyuic.com
71V65603S100PFGI
the part number is 71V65603S100PFGI
Part
71V65603S100PFGI
Description
IC SRAM 9M PARALLEL 100TQFP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $19.9627 $19.5634 $18.9646 $18.3657 $17.5672 Get Quotation!
Specification
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Access Time: 5ns
Packaging: Tray
Supplier Device Package: 100-TQFP (14x20)
Memory Type: Volatile
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: SRAM - Synchronous ZBT Memory IC 9Mb (256K x 36) Parallel 100MHz 5ns 100-TQFP (14x20)
Voltage - Supply: 3.135 V ~ 3.465 V
Clock Frequency: 100MHz
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Write Cycle Time - Word, Page: -
Moisture Sensitivity Level (MSL): 3 (168 Hours)
Manufacturer Standard Lead Time: 10 Weeks
Email: sale@shengyuic.com
Series: -
Base Part Number: IDT71V65603
Other Names: IDT71V65603S100PFGI IDT71V65603S100PFGI-ND
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Operating Temperature: -40°C ~ 85°C (TA)
Related Parts For 71V65603S100PFGI
71V632S5PFG

Integrated Device Technology

IC SRAM 2M PARALLEL 100TQFP

71V632S5PFG

Renesas

3.3V 64K x 32 Synchronous PipeLined Burst SRAM

71V632S5PFG

Integrated Device Technology (IDT)

SRAM 64Kx32 SYNC 3.3V PIPELINED BURST SRAM

71V632S5PFG

Renesas Electronics America

IC SRAM 2M PARALLEL 100TQFP

71V632S5PFG

Renesas Electronics Corporation

IC SRAM 2MBIT PARALLEL 100TQFP

71V632S5PFG8

Integrated Device Technology

IC SRAM 2M PARALLEL 100TQFP

71V632S5PFG8

Renesas

3.3V 64K x 32 Synchronous PipeLined Burst SRAM

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!