1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $6.9015 | $6.7635 | $6.5564 | $6.3494 | $6.0733 | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 180 nC @ 10 V |
FETFeature | 200W (Tc) |
DraintoSourceVoltage(Vdss) | MOSFET (Metal Oxide) |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Obsolete |
Package/Case | Automotive |
GateCharge(Qg)(Max)@Vgs | AEC-Q101 |
Grade | |
MountingType | PG-TO263-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
FETType | 42A (Tc) |
Technology | P-Channel |
Current-ContinuousDrain(Id)@25°C | 55 V |
Vgs(Max) | 3500 pF @ 25 V |
MinRdsOn) | 20mOhm @ 42A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT) |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
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