1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 1.8V @ 400µA |
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Vgs(th)(Max)@Id | 364 pF @ 25 V |
Vgs | ±20V |
FETFeature | -55°C ~ 150°C (TJ) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | PG-SOT223-4 |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | TO-261-4, TO-261AA |
InputCapacitance(Ciss)(Max)@Vds | 1.79W (Ta) |
Series | SIPMOS® |
Qualification | |
SupplierDevicePackage | 17.2 nC @ 10 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 1.1A (Ta) |
Vgs(Max) | - |
MinRdsOn) | 700mOhm @ 1.1A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT) |
PowerDissipation(Max) | Surface Mount |
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