shengyuic
shengyuic
sale@shengyuic.com
BSS123LT1G
the part number is BSS123LT1G
Part
BSS123LT1G
Manufacturer
Description
MOSFET N-CH 100V 170MA SOT23-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.3312 $0.3246 $0.3146 $0.3047 $0.2915 Get Quotation!
Specification
RdsOn(Max)@Id 2.6V @ 1mA
Vgs(th)(Max)@Id 20 pF @ 25 V
Vgs ±20V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature SOT-23-3 (TO-236)
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType TO-236-3, SC-59, SOT-23-3
InputCapacitance(Ciss)(Max)@Vds 225mW (Ta)
Series -
Qualification
SupplierDevicePackage -
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 170mA (Ta)
Vgs(Max) -
MinRdsOn) 6Ohm @ 100mA, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) Surface Mount
Related Parts For BSS123LT1G
BSS100

onsemi

MOSFET N-CH 100V 220MA TO92-3

BSS110

onsemi

MOSFET P-CH 50V 170MA TO92-3

BSS119 E6433

Infineon Technologies

MOSFET N-CH 100V 170MA SOT23-3

BSS119 E7796

Infineon Technologies

MOSFET N-CH 100V 170MA SOT23-3

BSS119 E7978

Infineon Technologies

MOSFET N-CH 100V 170MA SOT23-3

BSS119E6327

Infineon Technologies

MOSFET N-CH 100V 170MA SOT23-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!