shengyuic
shengyuic
sale@shengyuic.com
BSS138NL6327
the part number is BSS138NL6327
Part
BSS138NL6327
Manufacturer
Description
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Min Operating Temperature -55 °C
Mount Surface Mount
Fall Time 3 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 60 V
Drain to Source Resistance 3.5 Ω
Element Configuration Single
Voltage 50 V
Number of Pins 3
Number of Elements 1
Input Capacitance 41 pF
Lead Free Lead Free
Rds On Max 3.5 Ω
Max Power Dissipation 360 mW
Drain to Source Breakdown Voltage 60 V
Gate to Source Voltage (Vgs) 20 V
Current Rating 230 mA
Turn-On Delay Time 2.3 ns
Max Operating Temperature 150 °C
Power Dissipation 360 mW
Continuous Drain Current (ID) 230 mA
Rise Time 3 ns
Turn-Off Delay Time 6.7 ns
Voltage Rating (DC) 60 V
Current 2 A
Case/Package SOT-23-3
Related Parts For BSS138NL6327
BSS100

onsemi

MOSFET N-CH 100V 220MA TO92-3

BSS110

onsemi

MOSFET P-CH 50V 170MA TO92-3

BSS119 E6433

Infineon Technologies

MOSFET N-CH 100V 170MA SOT23-3

BSS119 E7796

Infineon Technologies

MOSFET N-CH 100V 170MA SOT23-3

BSS119 E7978

Infineon Technologies

MOSFET N-CH 100V 170MA SOT23-3

BSS119E6327

Infineon Technologies

MOSFET N-CH 100V 170MA SOT23-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!