1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Min Operating Temperature | -55 °C |
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Gate to Source Voltage (Vgs) | 10 V |
Mount | Surface Mount |
Fall Time | 100 ns |
Turn-On Delay Time | 25 ns |
RoHS | Compliant |
Radiation Hardening | No |
Max Operating Temperature | 150 °C |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation | 95 W |
Continuous Drain Current (ID) | 22 A |
Rise Time | 110 ns |
Turn-Off Delay Time | 210 ns |
Packaging | Tape & Reel |
Number of Pins | 3 |
Number of Elements | 1 |
Input Capacitance | 1.5 nF |
Rds On Max | 100 mΩ |
Case/Package | SMD/SMT |
Max Power Dissipation | 95 W |
Infineon
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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