1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $4.5584 | $4.4672 | $4.3305 | $4.1937 | $4.0114 | Get Quotation! |
Access Time (Max) | 55 ns |
---|---|
Organization | 64KX16 |
Output Characteristics | 3-STATE |
Standby Voltage-Min | 1.5V |
Surface Mount | YES |
Memory Type | Volatile |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Height Seated (Max) | 1.194mm |
Number of Functions | 1 |
Terminal Position | DUAL |
Package / Case | 44-TSOP (0.400, 10.16mm Width) |
Technology | SRAM - Asynchronous |
JESD-30 Code | R-PDSO-G44 |
Voltage - Supply | 2.2V~3.6V |
Number of Terminations | 44 |
Supply Voltage-Max (Vsup) | 3.6V |
Supply Voltage | 3V |
ECCN Code | EAR99 |
Width | 10.16mm |
Memory Format | SRAM |
Qualification Status | Not Qualified |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Supply Current-Max | 0.01mA |
Operating Temperature | -40°C~125°C TA |
Memory Density | 1048576 bit |
HTS Code | 8542.32.00.41 |
Memory Interface | Parallel |
Supply Voltage-Min (Vsup) | 2.2V |
I/O Type | COMMON |
Mounting Type | Surface Mount |
JESD-609 Code | e4 |
Power Supplies | 2.5/3.3V |
Pin Count | 44 |
Memory Width | 16 |
Time@Peak Reflow Temperature-Max (s) | 20 |
Peak Reflow Temperature (Cel) | 260 |
Series | MoBL® |
Standby Current-Max | 0.00001A |
Write Cycle Time - Word, Page | 55ns |
Memory Size | 1Mb 64K x 16 |
Length | 18.415mm |
Packaging | Tube |
Part Status | Obsolete |
Published | 2006 |
Terminal Pitch | 0.8mm |
Reach Compliance Code | unknown |
Base Part Number | CY62126 |
Cypress Semiconductor
Standard SRAM, 64KX16, 55NS, Cmos, PBGA48, 6 X 8 Mm, 1 Mm Height, VFBGA-48
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!