shengyuic
shengyuic
sale@shengyuic.com
ES3JB
the part number is ES3JB
Part
ES3JB
Description
DIODE GEN PURP 600V 3A DO214AA
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.2625 $0.2572 $0.2494 $0.2415 $0.231 Get Quotation!
Specification
Current-ReverseLeakage@Vr 34pF @ 4V, 1MHz
Speed Fast Recovery =< 500ns, > 200mA (Io)
F -
ProductStatus Active
Package/Case DO-214AA, SMB
Grade 35 ns
Capacitance@Vr -
ReverseRecoveryTime(trr) 10 µA @ 600 V
MountingType Surface Mount
Series -
Qualification
SupplierDevicePackage DO-214AA (SMB)
Voltage-Forward(Vf)(Max)@If 1.45 V @ 3 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 600 V
OperatingTemperature-Junction -55°C ~ 150°C
Current-AverageRectified(Io) 3A
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Related Parts For ES3JB
ES3J

ON Semiconductor

DIODE GEN PURP 600V 3A SMC

ES3J

onsemi

DIODE SUPERFAST SMC 600V 35NS

ES3J

SMC Diode Solutions

DIODE GEN PURP 600V 3A SMC

ES3J

Diotec Semiconductor

DIODE SUPERFAST SMC 600V 3A 35NS

ES3J

Good-Ark Semiconductor

RECTIFIER, SUPER FAST, 3A, 600V

ES3J

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

ES3J M6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

ES3J R6

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

ES3J R6G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AB

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!