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FQB19N10TM
the part number is FQB19N10TM
Part
FQB19N10TM
Manufacturer
Description
MOSFET N-CH 100V 19A D2PAK
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Max): 3.75W (Ta), 75W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: D²PAK (TO-263AB)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 100V 19A (Tc) 3.75W (Ta), 75W (Tc) Surface Mount D²PAK (TO-263AB)
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N-Channel
Series: QFET®
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V
Vgs (Max): ±25V
Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
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