shengyuic
shengyuic
sale@shengyuic.com
FQB33N10TM
the part number is FQB33N10TM
Part
FQB33N10TM
Manufacturer
Description
MOSFET N-CH 100V 33A D2PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±25V
Vgs 51 nC @ 10 V
FETFeature 3.75W (Ta), 127W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-263 (D2PAK)
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 33A (Tc)
Vgs(Max) 1500 pF @ 25 V
MinRdsOn) 52mOhm @ 16.5A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For FQB33N10TM
FQB30N06LTM

ON Semiconductor

Trans MOSFET N-CH 60V 32A 3-Pin(2+Tab) D2PAK T/R

FQB30N06LTM

onsemi

MOSFET N-CH 60V 32A D2PAK

FQB30N06LTM-NL

FAIRCHILD

TO-263(D2PAK)

FQB30N06TM

onsemi

MOSFET N-CH 60V 30A D2PAK

FQB32N12V2TM

onsemi

MOSFET N-CH 120V 32A D2PAK

FQB32N12V2TM

Fairchild Semiconductor

MOSFET N-CH 120V 32A D2PAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!