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FQB4N20LTM
the part number is FQB4N20LTM
Part
FQB4N20LTM
Manufacturer
Description
MOSFET N-CH 200V 3.8A D2PAK
Lead Free/ROHS
pb RoHs
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Specification
Drain to Source Voltage (Vdss): 200V
Power Dissipation (Max): 3.13W (Ta), 45W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: D²PAK (TO-263AB)
Vgs(th) (Max) @ Id: 2V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 200V 3.8A (Tc) 3.13W (Ta), 45W (Tc) Surface Mount D²PAK (TO-263AB)
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: N-Channel
Series: QFET®
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 1.9A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
Operating Temperature: -55°C ~ 150°C (TJ)
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