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FQD2N100TM
the part number is FQD2N100TM
Part
FQD2N100TM
Manufacturer
Description
MOSFET N-CH 1000V 1.6A DPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 5V @ 250µA
Vgs(th)(Max)@Id ±30V
Vgs 15.5 nC @ 10 V
FETFeature 2.5W (Ta), 50W (Tc)
DraintoSourceVoltage(Vdss) 1000 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-252AA
InputCapacitance(Ciss)(Max)@Vds -
Series QFET®
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 1.6A (Tc)
Vgs(Max) 520 pF @ 25 V
MinRdsOn) 9Ohm @ 800mA, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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