shengyuic
shengyuic
sale@shengyuic.com
IPB180N06S4H1ATMA2
the part number is IPB180N06S4H1ATMA2
Part
IPB180N06S4H1ATMA2
Manufacturer
Description
MOSFET N-CH 60V 180A TO263-7
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $4.4844 $4.3947 $4.2602 $4.1256 $3.9463 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 200µA
Vgs(th)(Max)@Id ±20V
Vgs 270 nC @ 10 V
FETFeature 250W (Tc)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case Automotive
GateCharge(Qg)(Max)@Vgs AEC-Q101
Grade
MountingType PG-TO263-7
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-263-7, D2PAK (6 Leads + Tab)
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 180A (Tc)
Vgs(Max) 21900 pF @ 25 V
MinRdsOn) 1.7mOhm @ 100A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPB180N06S4H1ATMA2
IPB100N04S204ATMA1

Infineon Technologies

MOSFET N-CH 40V 100A TO263-3

IPB100N04S204ATMA4

Infineon Technologies

MOSFET N-CH 40V 100A TO263-3

IPB100N04S2L-03ATMA2

Infineon Technologies

N-CHANNEL POWER MOSFET

IPB100N04S2L03ATMA1

Infineon Technologies

MOSFET N-CH 40V 100A TO263-3

IPB100N04S2L03ATMA2

Infineon Technologies

MOSFET N-CH 40V 100A TO263-3

IPB100N04S303ATMA1

Infineon Technologies

MOSFET N-CH 40V 100A TO263-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!