shengyuic
shengyuic
sale@shengyuic.com
IPB80N04S3-04
the part number is IPB80N04S3-04
Part
IPB80N04S3-04
Manufacturer
Description
Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, TO-263, 3 PIN
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.5692 $0.5578 $0.5407 $0.5237 $0.5009 Get Quotation!
Specification
Continuous Drain Current (Id) 80A
Type Nu6c9fu9053
Drain Source Voltage (Vdss) 40V
Power Dissipation (Pd) 136W
Gate Threshold Voltage (Vgs(th)@Id) 4V@90u03bcA
Drain Source On Resistance (RDS(on)@Vgs,Id) 3.8mu03a9@10V,80A
Related Parts For IPB80N04S3-04
IPB80N03S4L02ATMA1

Infineon Technologies

MOSFET N-CH 30V 80A TO263-3

IPB80N03S4L03ATMA1

Infineon Technologies

MOSFET N-CH 30V 80A TO263-3

IPB80N04S204ATMA1

Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

IPB80N04S204ATMA2

Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!