shengyuic
shengyuic
sale@shengyuic.com
IPB80N04S303ATMA1
the part number is IPB80N04S303ATMA1
Part
IPB80N04S303ATMA1
Manufacturer
Description
MOSFET N-CH 40V 80A TO263-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.7552 $2.7001 $2.6174 $2.5348 $2.4246 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 120µA
Vgs(th)(Max)@Id ±20V
Vgs 110 nC @ 10 V
FETFeature 188W (Tc)
DraintoSourceVoltage(Vdss) 40 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Last Time Buy
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO263-3-2
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 80A (Tc)
Vgs(Max) 7300 pF @ 25 V
MinRdsOn) 3.2mOhm @ 80A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPB80N04S303ATMA1
IPB80N03S4L02ATMA1

Infineon Technologies

MOSFET N-CH 30V 80A TO263-3

IPB80N03S4L03ATMA1

Infineon Technologies

MOSFET N-CH 30V 80A TO263-3

IPB80N04S204ATMA1

Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

IPB80N04S204ATMA2

Infineon Technologies

MOSFET N-CH 40V 80A TO263-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!