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IPB80N06S2L09ATMA2
the part number is IPB80N06S2L09ATMA2
Part
IPB80N06S2L09ATMA2
Manufacturer
Description
MOSFET N-CH 55V 80A TO263-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 2V @ 125µA
Vgs(th)(Max)@Id -
Vgs ±20V
FETFeature Surface Mount
DraintoSourceVoltage(Vdss) 55 V
OperatingTemperature TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 105 nC @ 10 V
InputCapacitance(Ciss)(Max)@Vds -55°C ~ 175°C (TJ)
Series OptiMOS™
Qualification
SupplierDevicePackage 2620 pF @ 25 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 80A (Tc)
Vgs(Max) 190W (Tc)
MinRdsOn) 8.2mOhm @ 52A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) PG-TO263-3-2
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