IPB80N06S3L-08 | Integrated Circuits (ICs)-Others -Shengyuic.com

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IPB80N06S3L-08

Inventory 14,904

Part

IPB80N06S3L-08

Manufacturer

Description

Power Field-Effect Transistor, 80A I(D), 55V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Lead Free/ROHS

Datasheets

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Specification

Max Operating Temperature	175 °C
Power Dissipation	105 W
Min Operating Temperature	-55 °C
Continuous Drain Current (ID)	80 A
Drain to Source Breakdown Voltage	55 V
Element Configuration	Single
Rise Time	35 ns
Gate to Source Voltage (Vgs)	16 V
Turn-Off Delay Time	39 ns
Fall Time	25 ns
RoHS	Compliant
Case/Package	TO-263