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IPD053N06N3G
the part number is IPD053N06N3G
Part
IPD053N06N3G
Manufacturer
Description
Power Field-Effect Transistor, 90A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
Min Operating Temperature -55 °C
Drain to Source Breakdown Voltage 60 V
Gate to Source Voltage (Vgs) 20 V
Mount Surface Mount, Through Hole
Fall Time 9 ns
Turn-On Delay Time 24 ns
RoHS Compliant
Radiation Hardening No
Max Operating Temperature 175 °C
Drain to Source Voltage (Vdss) 800 V
Power Dissipation 115 W
Drain to Source Resistance 5.3 mΩ
Continuous Drain Current (ID) 90 A
Element Configuration Single
Rise Time 68 ns
Turn-Off Delay Time 32 ns
Packaging Tape & Reel
Input Capacitance 290 pF
Rds On Max 2.7 Ω
Case/Package TO-220-3
Max Power Dissipation 42 W
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