shengyuic
shengyuic
sale@shengyuic.com
IPD60R600CP
the part number is IPD60R600CP
Part
IPD60R600CP
Manufacturer
Description
Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.59 $0.5782 $0.5605 $0.5428 $0.5192 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage 3 V
Dual Supply Voltage 650 V
Fall Time 17 ns
RoHS Compliant
Drain to Source Voltage (Vdss) 60 V
Drain to Source Resistance 600 mΩ
Element Configuration Single
Number of Pins 3
Number of Elements 1
Input Capacitance 13 nF
Rds On Max 3.4 mΩ
Max Power Dissipation 150 W
Drain to Source Breakdown Voltage 600 V
Nominal Vgs 3 V
Gate to Source Voltage (Vgs) 20 V
REACH SVHC No SVHC
Termination SMD/SMT
Turn-On Delay Time 17 ns
Max Operating Temperature 150 °C
Power Dissipation 60 W
Continuous Drain Current (ID) 6.1 A
Rise Time 12 ns
Turn-Off Delay Time 75 ns
Packaging Cut Tape
Case/Package TO-252-3
Related Parts For IPD60R600CP
IPD600N25N3GATMA1

Infineon Technologies

MOSFET N-CH 250V 25A TO252-3

IPD600N25N3GBTMA1

Infineon Technologies

MOSFET N-CH 250V 25A TO252-3

IPD60N10S412ATMA1

Infineon Technologies

MOSFET N-CH 100V 60A TO252-3

IPD60N10S4L12ATMA1

Infineon Technologies

MOSFET N-CH 100V 60A TO252-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!