shengyuic
shengyuic
sale@shengyuic.com
IPP60R099C7XKSA1
the part number is IPP60R099C7XKSA1
Part
IPP60R099C7XKSA1
Manufacturer
Description
MOSFET N-CH 600V 22A TO220-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $5.5775 $5.4659 $5.2986 $5.1313 $4.9082 Get Quotation!
Specification
RdsOn(Max)@Id 4V @ 490µA
Vgs(th)(Max)@Id ±20V
Vgs 42 nC @ 10 V
FETFeature 110W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO220-3-1
InputCapacitance(Ciss)(Max)@Vds -
Series CoolMOS™ C7
Qualification
SupplierDevicePackage TO-220-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 22A (Tc)
Vgs(Max) 1819 pF @ 400 V
MinRdsOn) 99mOhm @ 9.7A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For IPP60R099C7XKSA1
IPP600N25N3GXKSA1

Infineon Technologies

MOSFET N-CH 250V 25A TO220-3

IPP60R022S7XKSA1

Infineon Technologies

MOSFET N-CH 600V 23A TO220-3

IPP60R040C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 50A TO220-3

IPP60R040S7XKSA1

Infineon Technologies

HIGH POWER_NEW PG-TO220-3

IPP60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 35A TO220-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!