1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $1.08 | $1.0584 | $1.026 | $0.9936 | $0.9504 | Get Quotation! |
Min Operating Temperature | -55 °C |
---|---|
Threshold Voltage | 3 V |
Dual Supply Voltage | 560 V |
Fall Time | 14 ns |
RoHS | Compliant |
Drain to Source Voltage (Vdss) | 500 V |
Drain to Source Resistance | 399 mΩ |
Element Configuration | Single |
Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
Number of Pins | 3 |
Input Capacitance | 890 pF |
Rds On Max | 399 mΩ |
Max Power Dissipation | 83 W |
Drain to Source Breakdown Voltage | 500 V |
On-State Resistance | 399 mΩ |
Nominal Vgs | 3 V |
Gate to Source Voltage (Vgs) | 20 V |
REACH SVHC | No SVHC |
Termination | Through Hole |
Turn-On Delay Time | 35 ns |
Max Operating Temperature | 150 °C |
Power Dissipation | 83 W |
Continuous Drain Current (ID) | 9 A |
Rise Time | 14 ns |
Turn-Off Delay Time | 80 ns |
Package Quantity | 240 |
Case/Package | TO-247-3 |
Infineon
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!