shengyuic
shengyuic
sale@shengyuic.com
IPW60R299CP
the part number is IPW60R299CP
Part
IPW60R299CP
Manufacturer
Description
MOSFET N-CH 600V 11A TO-247
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.53 $1.4994 $1.4535 $1.4076 $1.3464 Get Quotation!
Specification
Min Operating Temperature -55 °C
Fall Time 5 ns
RoHS Compliant
Drain to Source Voltage (Vdss) 600 V
Drain to Source Resistance 299 mΩ
Element Configuration Single
Lifecycle Status Obsolete (Last Updated: 2 years ago)
Number of Pins 3
Height 21.1 mm
Input Capacitance 1.1 nF
Width 5.16 mm
Lead Free Lead Free
Rds On Max 299 mΩ
Max Power Dissipation 96 W
Drain to Source Breakdown Voltage 650 V
On-State Resistance 299 mΩ
Gate to Source Voltage (Vgs) 20 V
Current Rating 11 A
Turn-On Delay Time 10 ns
Max Operating Temperature 150 °C
Power Dissipation 96 W
Continuous Drain Current (ID) 11 A
Rise Time 5 ns
Length 16.03 mm
Turn-Off Delay Time 40 ns
Package Quantity 240
Voltage Rating (DC) 600 V
Case/Package TO-247-3
Related Parts For IPW60R299CP
IPW60R017C7XKSA1

Infineon Technologies

HIGH POWER_NEW

IPW60R018CFD7XKSA1

Infineon Technologies

MOSFET N CH

IPW60R024CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 77A TO247-3-41

IPW60R024P7XKSA1

Infineon Technologies

MOSFET N-CH 650V 101A TO247-3-41

IPW60R031CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 63A TO247-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!