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IRF250
the part number is IRF250
Part
IRF250
Manufacturer
Description
Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Uni Price $14.87 $14.5726 $14.1265 $13.6804 $13.0856 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage 4 V
Schedule B 8541290080|8541290080|8541290080|8541290080|8541290080
Dual Supply Voltage 200 V
Mount Through Hole
RoHS Non-Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 200 V
Drain to Source Resistance 85 mΩ
Lifecycle Status Production (Last Updated: 2 years ago)
Number of Pins 2
Number of Elements 1
Lead Free Contains Lead
Max Power Dissipation 150 W
Drain to Source Breakdown Voltage 200 V
On-State Resistance 100 mΩ
Nominal Vgs 4 V
Gate to Source Voltage (Vgs) 20 V
REACH SVHC No SVHC
Termination Through Hole
Max Operating Temperature 150 °C
Power Dissipation 150 W
Continuous Drain Current (ID) 30 A
Lead Pitch 11 mm
Case/Package TO-3
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