1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $1.808 | $1.7718 | $1.7176 | $1.6634 | $1.591 | Get Quotation! |
RdsOn(Max)@Id | 4V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 146 nC @ 10 V |
FETFeature | -55°C ~ 175°C (TJ) |
DraintoSourceVoltage(Vdss) | 55 V |
OperatingTemperature | TO-220AB |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220-3 |
InputCapacitance(Ciss)(Max)@Vds | 200W (Tc) |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | 3247 pF @ 25 V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 8mOhm @ 62A, 10V |
Package | Tube |
PowerDissipation(Max) | Through Hole |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
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