1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 95 nC @ 10 V |
---|---|
Vgs(th)(Max)@Id | - |
Vgs | 1300 pF @ 25 V |
FETFeature | TO-220-3 |
DraintoSourceVoltage(Vdss) | 150 V |
OperatingTemperature | ±20V |
DriveVoltage(MaxRdsOn | 70mOhm @ 12A, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 136W (Tc) |
InputCapacitance(Ciss)(Max)@Vds | TO-220AB |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | -55°C ~ 175°C (TJ) |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 27A (Tc) |
Vgs(Max) | Through Hole |
MinRdsOn) | 4V @ 250µA |
Package | Tube |
PowerDissipation(Max) | 10V |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!