sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 200 nC @ 10 V |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | 2400 pF @ 25 V |
| FETFeature | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| DraintoSourceVoltage(Vdss) | 150 V |
| OperatingTemperature | ±20V |
| DriveVoltage(MaxRdsOn | 42mOhm @ 22A, 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | 3.8W (Ta), 200W (Tc) |
| InputCapacitance(Ciss)(Max)@Vds | D2PAK |
| Series | HEXFET® |
| Qualification | |
| SupplierDevicePackage | -55°C ~ 175°C (TJ) |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 43A (Tc) |
| Vgs(Max) | Surface Mount |
| MinRdsOn) | 4V @ 250µA |
| Package | Tube |
| PowerDissipation(Max) | 10V |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!