sale@shengyuic.com
| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $3.173 | $3.1095 | $3.0143 | $2.9192 | $2.7922 | Get Quotation! |
| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 209 nC @ 10 V |
| FETFeature | 3.8W (Ta), 230W (Tc) |
| DraintoSourceVoltage(Vdss) | 30 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 7V, 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-220AB |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | HEXFET® |
| Qualification | |
| SupplierDevicePackage | TO-220-3 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 210A (Tc) |
| Vgs(Max) | 8250 pF @ 25 V |
| MinRdsOn) | 2.8mOhm @ 76A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!