1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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RdsOn(Max)@Id | 3V @ 250µA |
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Vgs(th)(Max)@Id | ±20V |
Vgs | 44 nC @ 4.5 V |
FETFeature | 3.1W (Ta), 120W (Tc) |
DraintoSourceVoltage(Vdss) | 20 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | D2PAK |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
Vgs(Max) | 2980 pF @ 10 V |
MinRdsOn) | 6mOhm @ 15A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
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