1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $2.3496 | $2.3026 | $2.2321 | $2.1616 | $2.0676 | Get Quotation! |
RdsOn(Max)@Id | 220 nC @ 10 V |
---|---|
Vgs(th)(Max)@Id | 5310 pF @ 25 V |
Vgs | ±20V |
FETFeature | -55°C ~ 175°C (TJ) |
DraintoSourceVoltage(Vdss) | 75 V |
OperatingTemperature | TO-220AB |
DriveVoltage(MaxRdsOn | 7mOhm @ 82A, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220-3 |
InputCapacitance(Ciss)(Max)@Vds | 330W (Tc) |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | 10V |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 140A (Tc) |
Vgs(Max) | - |
MinRdsOn) | 4V @ 250µA |
Package | Tube |
PowerDissipation(Max) | Through Hole |
International Rectifier
Power Field-Effect Transistor, 62A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
sale@shengyuic.com
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!