shengyuic
shengyuic
sale@shengyuic.com
IRF6631TR1PBF
the part number is IRF6631TR1PBF
Part
IRF6631TR1PBF
Manufacturer
Description
MOSFET N-CH 30V 13A DIRECTFET
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.04 $1.0192 $0.988 $0.9568 $0.9152 Get Quotation!
Specification
Min Operating Temperature -40 °C
Mount Surface Mount
Fall Time 4.9 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 30 V
Drain to Source Resistance 10.8 mΩ
Number of Pins 5
Height 506 µm
Input Capacitance 1.45 nF
Lead Free Lead Free
Rds On Max 7.8 mΩ
Max Power Dissipation 2.2 W
Drain to Source Breakdown Voltage 30 V
Nominal Vgs 1.8 V
Gate to Source Voltage (Vgs) 20 V
REACH SVHC No SVHC
Current Rating 13 A
Turn-On Delay Time 15 ns
Max Operating Temperature 150 °C
Power Dissipation 42 W
Continuous Drain Current (ID) 13 A
Rise Time 18 ns
Length 4.826 mm
Turn-Off Delay Time 18 ns
Voltage Rating (DC) 30 V
Related Parts For IRF6631TR1PBF
IRF60B217

Infineon Technologies

MOSFET N-CH 60V 60A TO220AB

IRF60B217

International Rectifier

TRENCH 40<-<100V

IRF60DM206

Infineon

MOSFET N-CH 60V 130A

IRF60DM206

Infineon Technologies

MOSFET N-CH 60V 130A DIRECTFET

IRF60DM206

International Rectifier

IRF60 - 12V-300V N-CHANNEL POWER

IRF60DM206ATMA1

Infineon Technologies

FET N-CHANNEL

IRF60R217

Infineon Technologies

MOSFET N-CH 60V 58A DPAK

IRF60SC241ARMA1

Infineon Technologies

MOSFET N-CH 60V 360A TO263-7

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!