1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.7885 | $0.7727 | $0.7491 | $0.7254 | $0.6939 | Get Quotation! |
RdsOn(Max)@Id | 15.5mOhm @ 9.7A, 10V |
---|---|
Vgs(th)(Max)@Id | 9nC @ 4.5V |
Vgs | 2.35V @ 25µA |
Configuration | 2 N-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 30V |
OperatingTemperature | Surface Mount |
ProductStatus | Not For New Designs |
Package/Case | 8-SO |
GateCharge(Qg)(Max)@Vgs | 760pF @ 15V |
Grade | - |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 2W |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | - |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 9.7A |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
Power-Max | -55°C ~ 175°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Infineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
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