1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.686 | $0.6723 | $0.6517 | $0.6311 | $0.6037 | Get Quotation! |
RdsOn(Max)@Id | 2.35V @ 25µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 12 nC @ 4.5 V |
FETFeature | 2.5W (Ta) |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | 8-SOIC (0.154, 3.90mm Width) |
GateCharge(Qg)(Max)@Vgs | 8-SO |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | Surface Mount |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 14A (Ta) |
Vgs(Max) | 1020 pF @ 15 V |
MinRdsOn) | 8.7mOhm @ 14A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Infineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
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