1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Drain to Source Voltage (Vdss): | 20V |
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Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Packaging: | Tube |
Supplier Device Package: | 8-SO |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | Mosfet Array 2 N-Channel (Dual) 20V 10A 2W Surface Mount 8-SO |
FET Feature: | Logic Level Gate |
Power - Max: | 2W |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | sale@shengyuic.com |
FET Type: | 2 N-Channel (Dual) |
Series: | HEXFET® |
Current - Continuous Drain (Id) @ 25°C: | 10A |
Base Part Number: | IRF8910PBF |
Other Names: | SP001577616 |
Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 10V |
Rds On (Max) @ Id, Vgs: | 13.4 mOhm @ 10A, 10V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Infineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
sale@shengyuic.com
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