1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 18.3mOhm @ 8.9A, 10V |
---|---|
Vgs(th)(Max)@Id | 7.4nC @ 4.5V |
Vgs | 2.5V @ 250µA |
Configuration | 2 N-Channel (Dual) |
FETFeature | Logic Level Gate |
DraintoSourceVoltage(Vdss) | 20V |
OperatingTemperature | Surface Mount |
ProductStatus | Obsolete |
Package/Case | 8-SO |
GateCharge(Qg)(Max)@Vgs | 540pF @ 10V |
Grade | |
MountingType | 8-SOIC (0.154, 3.90mm Width) |
InputCapacitance(Ciss)(Max)@Vds | 2W |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 8.9A |
Package | Tube |
Power-Max | -55°C ~ 150°C (TJ) |
International Rectifier
Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
Infineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
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