1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $2.6596 | $2.6064 | $2.5266 | $2.4468 | $2.3404 | Get Quotation! |
RdsOn(Max)@Id | 2.7V @ 250µA |
---|---|
Vgs(th)(Max)@Id | ±16V |
Vgs | 110 nC @ 5 V |
FETFeature | 230W (Tc) |
DraintoSourceVoltage(Vdss) | 40 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220AB |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 75A (Tc) |
Vgs(Max) | 5080 pF @ 25 V |
MinRdsOn) | 3.1mOhm @ 75A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Infineon
SVHC (20-Jun-2011); Current Id Max:130A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W
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