1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.88 | $0.8624 | $0.836 | $0.8096 | $0.7744 | Get Quotation! |
RdsOn(Max)@Id | 2.2V @ 100µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 60 nC @ 4.5 V |
FETFeature | 125W (Tc) |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 171A (Tc) |
Vgs(Max) | 5050 pF @ 15 V |
MinRdsOn) | 2.4mOhm @ 68A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Infineon
Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
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