1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.8505 | $0.8335 | $0.808 | $0.7825 | $0.7484 | Get Quotation! |
RdsOn(Max)@Id | 2.35V @ 25µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 13 nC @ 4.5 V |
FETFeature | 65W (Tc) |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-220AB |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | TO-220-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 62A (Tc) |
Vgs(Max) | 1077 pF @ 15 V |
MinRdsOn) | 8.7mOhm @ 31A, 10V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Infineon
Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
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