1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 50 nC @ 10 V |
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Vgs(th)(Max)@Id | - |
Vgs | 840 pF @ 25 V |
FETFeature | TO-261-4, TO-261AA |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | ±16V |
DriveVoltage(MaxRdsOn | 31mOhm @ 4.6A, 10V |
ProductStatus | Obsolete |
Package/Case | |
GateCharge(Qg)(Max)@Vgs | |
Grade | |
MountingType | 1W (Ta) |
InputCapacitance(Ciss)(Max)@Vds | SOT-223 |
Series | HEXFET® |
Qualification | |
SupplierDevicePackage | -55°C ~ 150°C (TJ) |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 4.6A (Ta) |
Vgs(Max) | Surface Mount |
MinRdsOn) | 1V @ 250µA |
Package | Tape & Reel (TR),Cut Tape (CT) |
PowerDissipation(Max) | 4.5V, 10V |
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