shengyuic
shengyuic
sale@shengyuic.com
IRLR3110ZPBF
the part number is IRLR3110ZPBF
Part
IRLR3110ZPBF
Manufacturer
Description
MOSFET N-CH 100V 42A DPAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 2.5V @ 100µA
Vgs(th)(Max)@Id ±16V
Vgs 48 nC @ 4.5 V
FETFeature 140W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Discontinued at Digi-Key
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
MountingType TO-252AA (DPAK)
InputCapacitance(Ciss)(Max)@Vds -
Series HEXFET®
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 42A (Tc)
Vgs(Max) 3980 pF @ 25 V
MinRdsOn) 14mOhm @ 38A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IRLR3110ZPBF
IRLR014

Vishay

MOSFET N-CH 60V 7.7A DPAK

IRLR014

Vishay Siliconix

MOSFET N-CH 60V 7.7A DPAK

IRLR014NPBF

Infineon Technologies

MOSFET N-CH 55V 10A DPAK

IRLR014NTR

Infineon Technologies

MOSFET N-CH 55V 10A DPAK

IRLR014NTRL

Infineon Technologies

MOSFET N-CH 55V 10A DPAK

IRLR014NTRPBF

Infineon

MOSFET N-CH 55V 10A DPAK

IRLR014NTRPBF

Infineon Technologies

MOSFET N-CH 55V 10A DPAK

IRLR014NTRR

Infineon Technologies

MOSFET N-CH 55V 10A DPAK

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!