JS28F256M29EBHB TR | Integrated Circuits (ICs)-Memory -Shengyuic.com

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JS28F256M29EBHB TR

Inventory 14,735

Part

JS28F256M29EBHB TR

Manufacturer

Micron Technology

Description

IC FLASH 256M PARALLEL

Lead Free/ROHS

Datasheets

CAD Models

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Specification

Access Time:	110ns
Packaging:	Tape & Reel (TR)
Memory Type:	Non-Volatile
Lead Free Status / RoHS Status:	Lead free / RoHS Compliant
Detailed Description:	FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Parallel 110ns
Voltage - Supply:	2.7 V ~ 3.6 V
Memory Size:	256Mb (32M x 8, 16M x 16)
Memory Interface:	Parallel
Write Cycle Time - Word, Page:	110ns
Moisture Sensitivity Level (MSL):	1 (Unlimited)
Email:	sale@shengyuic.com
Series:	-
Other Names:	JS28F256M29EBHB TR-ND JS28F256M29EBHBTR
Memory Format:	FLASH
Technology:	FLASH - NOR
Operating Temperature:	-40°C ~ 85°C (TA)