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NAND04GW3B2DN6E

Part No NAND04GW3B2DN6E
Manufacturer Micron Technology
Description IC FLASH 4G PARALLEL 48TSOP
Lead Free Status / RoHS Status Lead Free / RoHS compliant
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Specifications

Data sheet

Package / Case:48-TFSOP (0.724", 18.40mm Width)
Mounting Type:Surface Mount
Access Time:25ns
Packaging:Tray
Supplier Device Package:48-TSOP
Memory Type:Non-Volatile
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Detailed Description:FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 25ns 48-TSOP
Voltage - Supply:2.7 V ~ 3.6 V
Memory Size:4Gb (512M x 8)
Memory Interface:Parallel
Write Cycle Time - Word, Page:25ns
Moisture Sensitivity Level (MSL):3 (168 Hours)
Email:info@shengyuic.com
Series:-
Base Part Number:NAND04G
Memory Format:FLASH
Technology:FLASH - NAND
Operating Temperature:-40°C ~ 85°C (TA)

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