shengyuic
shengyuic
sale@shengyuic.com
NTMSD2P102LR2
the part number is NTMSD2P102LR2
Part
NTMSD2P102LR2
Manufacturer
Description
MOSFET P-CH 20V 2.3A 8-SOIC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.2 $0.196 $0.19 $0.184 $0.176 Get Quotation!
Specification
Drain to Source Voltage (Vdss): 20V
Power Dissipation (Max): 710mW (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Detailed Description: P-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 8-SOIC
FET Feature: Schottky Diode (Isolated)
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Email: sale@shengyuic.com
FET Type: P-Channel
Series: FETKY™
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Other Names: NTMSD2P102LR2OS
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Vgs (Max): ±10V
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.4A, 4.5V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Related Parts For NTMSD2P102LR2
NTMS10P02R2

onsemi

MOSFET P-CH 20V 8.8A 8SOIC

NTMS10P02R2G

ON Semiconductor

MOSFET P-CH 20V 8.8A 8-SOIC

NTMS10P02R2G

onsemi

MOSFET P-CH 20V 8.8A 8SOIC

NTMS3P03R2

ON Semiconductor

MOSFET P-CH 30V 2.34A 8-SOIC

NTMS3P03R2

onsemi

MOSFET P-CH 30V 2.34A 8SOIC

NTMS3P03R2G

ON Semiconductor

MOSFET P-CH 30V 2.34A 8-SOIC

NTMS3P03R2G

onsemi

MOSFET P-CH 30V 2.34A 8SOIC

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!