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RdsOn(Max)@Id | 2V @ 1mA |
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Vgs(th)(Max)@Id | ±20V |
Vgs | 9.4 nC @ 10 V |
FETFeature | 280mW (Tj) |
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | Surface Mount |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | SOT-23 (TO-236AB) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TrenchMOS™ |
Qualification | |
SupplierDevicePackage | TO-236-3, SC-59, SOT-23-3 |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 5.4A (Tc) |
Vgs(Max) | 350 pF @ 30 V |
MinRdsOn) | 42mOhm @ 2A, 10V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Nexperia
NEXPERIA - PMV40UN2R - MOSFET Transistor, N Channel, 4.4 A, 30 V, 0.036 ohm, 4.5 V, 650 mV
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