shengyuic
shengyuic
sale@shengyuic.com
SI1308EDL-T1-GE3
the part number is SI1308EDL-T1-GE3
Part
SI1308EDL-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 1.4A SOT323
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.5236 $0.5131 $0.4974 $0.4817 $0.4608 Get Quotation!
Specification
Min Operating Temperature -55 °C
Threshold Voltage 600 mV
Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Mount Surface Mount
Fall Time 8 ns
RoHS Compliant
Radiation Hardening No
Drain to Source Voltage (Vdss) 30 V
Drain to Source Resistance 110 mΩ
Element Configuration Single
Number of Channels 1
Number of Pins 3
Height 1 mm
Number of Elements 1
Input Capacitance 105 pF
Width 1.35 mm
Lead Free Lead Free
Rds On Max 132 mΩ
Max Power Dissipation 500 mW
Max Junction Temperature (Tj) 150 °C
Drain to Source Breakdown Voltage 30 V
Gate to Source Voltage (Vgs) 12 V
REACH SVHC No SVHC
Turn-On Delay Time 2 ns
Weight 124.596154 mg
Resistance 132 mΩ
Max Operating Temperature 150 °C
Power Dissipation 400 mW
Continuous Drain Current (ID) 1.5 A
Rise Time 9 ns
Length 2.2 mm
Turn-Off Delay Time 8 ns
Case/Package SOT-323
Related Parts For SI1308EDL-T1-GE3
SI1300BDL-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 400MA SC70-3

SI1300BDL-T1-GE3

Vishay

MOSFET N-CH 20V 400MA SC-70-3

SI1300BDL-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 400MA SC70-3

SI1300DL-T1

VISHAY

Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 3 PIN

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!