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SI2312BDS-T1-E3
the part number is SI2312BDS-T1-E3
Part
SI2312BDS-T1-E3
Manufacturer
Description
MOSFET N-CH 20V 3.9A SOT23-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Uni Price $0.6105 $0.5983 $0.58 $0.5617 $0.5372 Get Quotation!
Specification
RdsOn(Max)@Id 850mV @ 250µA
Vgs(th)(Max)@Id ±8V
Vgs 12 nC @ 4.5 V
FETFeature 750mW (Ta)
DraintoSourceVoltage(Vdss) 20 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 1.8V, 4.5V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType SOT-23-3 (TO-236)
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage TO-236-3, SC-59, SOT-23-3
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 3.9A (Ta)
Vgs(Max) -
MinRdsOn) 31mOhm @ 5A, 4.5V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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