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SI2335DS-T1-GE3
the part number is SI2335DS-T1-GE3
Part
SI2335DS-T1-GE3
Manufacturer
Description
MOSFET P-CH 12V 3.2A SOT23-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
RdsOn(Max)@Id 450mV @ 250µA (Min)
Vgs(th)(Max)@Id ±8V
Vgs 15 nC @ 4.5 V
FETFeature 750mW (Ta)
DraintoSourceVoltage(Vdss) 12 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 1.8V, 4.5V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType SOT-23-3 (TO-236)
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage TO-236-3, SC-59, SOT-23-3
FETType P-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 3.2A (Ta)
Vgs(Max) 1225 pF @ 6 V
MinRdsOn) 51mOhm @ 4A, 4.5V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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