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SI2335DS-T1
the part number is SI2335DS-T1
Part
SI2335DS-T1
Manufacturer
Description
Small Signal Field-Effect Transistor, 3.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Specification
Min Operating Temperature -55 °C
Gate to Source Voltage (Vgs) 8 V
Mount Surface Mount
Fall Time 15 ns
Turn-On Delay Time 13 ns
RoHS Non-Compliant
Weight 1.437803 g
Max Operating Temperature 150 °C
Drain to Source Voltage (Vdss) -12 V
Power Dissipation 750 mW
Drain to Source Resistance 51 mΩ
Continuous Drain Current (ID) 4 A
Element Configuration Single
Rise Time 15 ns
Number of Channels 1
Turn-Off Delay Time 50 ns
Number of Pins 3
Number of Elements 1
Case/Package SOT-23-3
Max Power Dissipation 750 mW
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