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SI4102DY-T1-E3
the part number is SI4102DY-T1-E3
Part
SI4102DY-T1-E3
Manufacturer
Description
MOSFET N-CH 100V 3.8A 8SO
Lead Free/ROHS
pb RoHs
Datasheets
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Specification
RdsOn(Max)@Id 4V @ 250µA
Vgs(th)(Max)@Id ±20V
Vgs 11 nC @ 10 V
FETFeature 2.4W (Ta), 4.8W (Tc)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 8-SOIC
InputCapacitance(Ciss)(Max)@Vds -
Series TrenchFET®
Qualification
SupplierDevicePackage 8-SOIC (0.154, 3.90mm Width)
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 3.8A (Tc)
Vgs(Max) 370 pF @ 50 V
MinRdsOn) 158mOhm @ 2.7A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 150°C (TJ)
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